Coherent transitions between the shallow acceptor levels in germanium using intense THz pulses
Nonlinear transmission spectroscopy was performed on a doped Ge:Ga semiconductor using intense THz pulses with different cycle numbers. When single-cycle pulses were used, non-perturbative phenomena, such as the ionization of shallow impurities, competed with the conventional coherent transition, wh...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2013-01-01
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| Serie: | New Journal of Physics |
| Accesso online: | https://doi.org/10.1088/1367-2630/15/6/065012 |
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