Coherent transitions between the shallow acceptor levels in germanium using intense THz pulses
Nonlinear transmission spectroscopy was performed on a doped Ge:Ga semiconductor using intense THz pulses with different cycle numbers. When single-cycle pulses were used, non-perturbative phenomena, such as the ionization of shallow impurities, competed with the conventional coherent transition, wh...
Guardat en:
| Autors principals: | , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IOP Publishing
2013-01-01
|
| Col·lecció: | New Journal of Physics |
| Accés en línia: | https://doi.org/10.1088/1367-2630/15/6/065012 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|