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Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

Abstract The well‐developed high‐k technologies ease the integration complexity for HfO2‐based ferroelectric (FE) devices in the complementary metal‐oxide semiconductor processes. Sputtered HfxZr(1‐x)O2 (HZO) FEs have proven their thermal compatibility in back‐end‐of‐line (BEOL) integration processe...

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Principais autores: Xuetao Wang, Stefan Slesazeck, Thomas Mikolajick, Matthias Grube
Format: Artigo
Sprog:Inglês
Udgivet: Wiley-VCH 2024-06-01
Serier:Advanced Electronic Materials
Fag:
back end of line
ferroelectrics
hafnium zirconium oxide
oxygen vacancy
sputtering
tungsten oxide
Online adgang:https://doi.org/10.1002/aelm.202300798
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