Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes
Abstract The well‐developed high‐k technologies ease the integration complexity for HfO2‐based ferroelectric (FE) devices in the complementary metal‐oxide semiconductor processes. Sputtered HfxZr(1‐x)O2 (HZO) FEs have proven their thermal compatibility in back‐end‐of‐line (BEOL) integration processe...
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| Główni autorzy: | , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Wiley-VCH
2024-06-01
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| Seria: | Advanced Electronic Materials |
| Hasła przedmiotowe: | |
| Dostęp online: | https://doi.org/10.1002/aelm.202300798 |
| Etykiety: |
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