Low Resistivity and High Carrier Concentration in SnO<sub>2</sub> Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments
The tin dioxide (SnO<sub>2</sub>) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere on their su...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , , , |
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| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI AG
2025-06-01
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| Cyfres: | Nanomaterials |
| Pynciau: | |
| Mynediad Ar-lein: | https://www.mdpi.com/2079-4991/15/13/986 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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