Low Resistivity and High Carrier Concentration in SnO₂ Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments

The tin dioxide (SnO₂) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere on their su...

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Hlavní autoři:	Qi-Zhen Chen, Zhi-Xuan Zhang, Wan-Qiang Fu, Jing-Ru Duan, Yu-Xin Yang, Chao-Nan Chen, Shui-Yang Lien
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2025-06-01
Edice:	Nanomaterials
Témata:	PEALD SnO<sub>2</sub> annealing ETL PSCs
On-line přístup:	https://www.mdpi.com/2079-4991/15/13/986
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