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Structural and electrical characterization of Hf0.5Zr0.5O2 thin films crystallized by rapid thermal annealing

Abstract The effects of rapid thermal annealing (RTA) temperature on the structural and electrical properties of 10 nm-thick Hf0.5Zr0.5O2 (HZO) thin films were investigated. Structural analyses revealed that the films remained largely amorphous at low annealing temperatures and crystallized above 60...

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Bibliografische Detailangaben
Hauptverfasser: Jucheol Park, Yeong Gyeong Park, Min-Ho Kang, Myung-Keun Lee, Moon Seop Hyun
Format: Artigo
Sprache:Inglês
Veröffentlicht: SpringerOpen 2026-06-01
Schriftenreihe:Applied Microscopy
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Online-Zugang:https://doi.org/10.1186/s42649-026-00141-x
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