Structural and electrical characterization of Hf0.5Zr0.5O2 thin films crystallized by rapid thermal annealing

Abstract The effects of rapid thermal annealing (RTA) temperature on the structural and electrical properties of 10 nm-thick Hf0.5Zr0.5O2 (HZO) thin films were investigated. Structural analyses revealed that the films remained largely amorphous at low annealing temperatures and crystallized above 60...

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Principais autores:	Jucheol Park, Yeong Gyeong Park, Min-Ho Kang, Myung-Keun Lee, Moon Seop Hyun
Formato:	Artigo
Idioma:	Inglês
Publicado em:	SpringerOpen 2026-06-01
Colecção:	Applied Microscopy
Assuntos:	Ferroelectric Hf0.5Zr0.5O2 Piezoresponse force microscopy Rapid thermal annealing Grazing incidence X-ray diffraction Transmission electron microscopy
Acesso em linha:	https://doi.org/10.1186/s42649-026-00141-x
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