Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong–Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates
The first part of this work evaluates Al-doped ZnO (AZO) as an optically transparent top-gate material for studies on semiconductor quantum dots. In comparison with conventional Ti gates, samples with AZO gates demonstrate a more than three times higher intensity in the quantum dot emission under co...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2024-10-01
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| Serie: | Nanomaterials |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2079-4991/14/21/1712 |
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