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Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong–Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates

The first part of this work evaluates Al-doped ZnO (AZO) as an optically transparent top-gate material for studies on semiconductor quantum dots. In comparison with conventional Ti gates, samples with AZO gates demonstrate a more than three times higher intensity in the quantum dot emission under co...

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Principais autores: Ahmed Alshaikh, Jun Peng, Robert Zierold, Robert H. Blick, Christian Heyn
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2024-10-01
Serier:Nanomaterials
Fag:
Al-doped ZnO
GaAs quantum dot
photoluminescence
exciton
lifetime
Stark shift
Online adgang:https://www.mdpi.com/2079-4991/14/21/1712
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