Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measure...

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Detalhes bibliográficos

Principais autores:	Jules Tillement, Cyril Cervera, Jacques Baylet, Christophe Jany, François Nardelli, Thomas Di Rito, Sylvain Georges, Gabriel Mugny, Olivier Saxod, Olivier Gravrand, Thierry Baron, François Roy, Frédéric Boeuf
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2023-11-01
coleção:	Sensors
Assuntos:	InGaAs photodiode SWIR shallow-mesa small pitch
Acesso em linha:	https://www.mdpi.com/1424-8220/23/22/9219
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