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Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing

This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measure...

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Principais autores: Jules Tillement, Cyril Cervera, Jacques Baylet, Christophe Jany, François Nardelli, Thomas Di Rito, Sylvain Georges, Gabriel Mugny, Olivier Saxod, Olivier Gravrand, Thierry Baron, François Roy, Frédéric Boeuf
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2023-11-01
Serier:Sensors
Fag:
InGaAs
photodiode
SWIR
shallow-mesa
small pitch
Online adgang:https://www.mdpi.com/1424-8220/23/22/9219
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