Multi-Layer Metallization Structure Development for Highly Efficient Polycrystalline SnSe Thermoelectric Devices

Recently, SnSe material with an outstanding high ZT (Figure of merit) of 2.6 has attracted much attention due to its strong applicability for highly efficient thermoelectric devices. Many studies following the first journal publication have been focused on SnSe materials, not on thermoelectric devic...

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Hlavní autoři:	Yeongseon Kim, Giwan Yoon, Byung Jin Cho, Sang Hyun Park
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2017-10-01
Edice:	Applied Sciences
Témata:	tin selenide thermoelectric module contact resistance metallization
On-line přístup:	https://www.mdpi.com/2076-3417/7/11/1116
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