Multi-Layer Metallization Structure Development for Highly Efficient Polycrystalline SnSe Thermoelectric Devices
Recently, SnSe material with an outstanding high ZT (Figure of merit) of 2.6 has attracted much attention due to its strong applicability for highly efficient thermoelectric devices. Many studies following the first journal publication have been focused on SnSe materials, not on thermoelectric devic...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2017-10-01
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| Col·lecció: | Applied Sciences |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2076-3417/7/11/1116 |
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