Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs
In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures. We demonstrate that the additional lateral band-to-band-tunneling (L-BTBT) in the NTFETs owing to the core gate increases their OFF-state...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IEEE
2017-01-01
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| Serie: | IEEE Access |
| Soggetti: | |
| Accesso online: | https://ieeexplore.ieee.org/document/8037985/ |
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