Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket

The detrimental lateral band-to-band tunneling (L-BTBT) governing the OFF-state performance of the junctionless (JL) FETs is more pronounced in emerging Nanotube (NT) transistor architectures. This restricts the scaling of NT JLFETs irrespective of their ultimate electrostatic gate control due to ad...

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Principais autores:	Aakash Kumar Jain, Jaspreet Singh, Mamidala Jagadesh Kumar
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	IEEE 2019-01-01
סדרה:	IEEE Journal of the Electron Devices Society
נושאים:	Gate induced drain leakage (GIDL) Junctionless accumulation mode FET (JAMFET) Nanotube JAMFET (NT JAMFET) Nanotube Junctionless FET (NT JLFET) parasitic bipolar junction transistor (BJT) Drain induced barrier lowering (DIBL)
גישה מקוונת:	https://ieeexplore.ieee.org/document/8798975/
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