Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain
Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage. The GIDL of fin-like TFTs (FinTFTs) examined in this study was dominated...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2018-08-01
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| Col·lecció: | Applied Sciences |
| Matèries: | |
| Accés en línia: | http://www.mdpi.com/2076-3417/8/8/1406 |
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