A highly integrated nonvolatile bidirectional RFET with low leakage current

A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFE...

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Detalhes bibliográficos

Principais autores:	Xi Liu, Mengmeng Li, Shouqiang Zhang, Xiaoshi Jin
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Elsevier 2023-09-01
coleção:	Heliyon
Assuntos:	Reconfigurable FETs Bidirectional Nonvolatile Low leakage
Acesso em linha:	http://www.sciencedirect.com/science/article/pii/S2405844023065064
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