Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is s...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
IEEE
2022-01-01
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| Rangatū: | IEEE Journal of the Electron Devices Society |
| Ngā marau: | |
| Urunga tuihono: | https://ieeexplore.ieee.org/document/9657073/ |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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