Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs
ABSTRACT Bilayer MoS2 exhibits bandgap narrowing under a vertical electric field due to inversion symmetry breaking, with the extent of reduction scaling proportionally with field strength. Leveraging this intrinsic property, this study investigates its impact on the performance of bilayer MoS2 Scho...
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| Автори: | , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley-VCH
2025-12-01
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| Серія: | Advanced Electronic Materials |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1002/aelm.202500502 |
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