Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels

Abstract In this work, bottom‐up Al–Si–Al nanowire (NW) heterostructures are presented, which act as a prototype vehicle toward top‐down fabricated nanosheet (NS) and multi‐wire (MW) reconfigurable field‐effect transistors (RFETs). Evaluating the key parameters of these transistors regarding the on‐...

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Ngā kaituhi matua:	Lukas Wind, Raphael Behrle, Martien I. denHertog, Corban G. E. Murphey, James F. Cahoon, Masiar Sistani, Walter M. Weber
Hōputu:	Artigo
Reo:	Inglês
I whakaputaina:	Wiley-VCH 2024-02-01
Rangatū:	Advanced Electronic Materials
Ngā marau:	combinational logic reconfigurable transistor RFET SBFET silicon on insulator
Urunga tuihono:	https://doi.org/10.1002/aelm.202300483
Ngā Tūtohu:	Tāpirihia he Tūtohu Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!

Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels

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