A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

A promising approach to advance electronics beyond static operations is to enhance state-ofthe- art systems by the functional diversification of transistors. Here, we experimentally demonstrate that an ultra-thin Ge channel implemented on a Si on insulator platform enables run-time switchable symmet...

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Manylion Llyfryddiaeth

Prif Awduron:	Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Alexandra Dobler, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber
Fformat:	Artigo
Iaith:	Inglês
Cyhoeddwyd:	IEEE 2024-01-01
Cyfres:	IEEE Journal of the Electron Devices Society
Pynciau:	Germanium metal-semiconductor heterojunction reconfigurable transistor negative differential resistance
Mynediad Ar-lein:	https://ieeexplore.ieee.org/document/10608155/
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