A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance
A promising approach to advance electronics beyond static operations is to enhance state-ofthe- art systems by the functional diversification of transistors. Here, we experimentally demonstrate that an ultra-thin Ge channel implemented on a Si on insulator platform enables run-time switchable symmet...
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| Автори: | , , , , , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
IEEE
2024-01-01
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| Серія: | IEEE Journal of the Electron Devices Society |
| Предмети: | |
| Онлайн доступ: | https://ieeexplore.ieee.org/document/10608155/ |
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