Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions
The degradation characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation were reported after multiple pulsed neutron-gamma irradiation at room temperature. The radiation-sensitive parameters of...
Kaydedildi:
| Asıl Yazarlar: | , , , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IEEE
2021-01-01
|
| Seri Bilgileri: | IEEE Access |
| Konular: | |
| Online Erişim: | https://ieeexplore.ieee.org/document/9627672/ |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|