Código QR (código de barras bidimensional)

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si<sub>1−x</sub>Ge<sub>x</sub> structures,...

תיאור מלא

שמור ב:
Principais autores: Tomas Ceponis, Laimonas Deveikis, Stanislau Lastovskii, Leonid Makarenko, Jevgenij Pavlov, Kornelijus Pukas, Vytautas Rumbauskas, Eugenijus Gaubas
פורמט: Artigo
שפה:Inglês
יצא לאור: MDPI AG 2020-12-01
סדרה:Sensors
נושאים:
SiGe
radiation detectors
electron and proton irradiations
microwave probed photoconductivity
pulsed barrier capacitance transients
steady-state photo-ionization spectroscopy
גישה מקוונת:https://www.mdpi.com/1424-8220/20/23/6884
תגים: הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!

פריטים דומים