Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si_1−xGe_x structures,...

Полное описание

Библиографические подробности

Главные авторы:	Tomas Ceponis, Laimonas Deveikis, Stanislau Lastovskii, Leonid Makarenko, Jevgenij Pavlov, Kornelijus Pukas, Vytautas Rumbauskas, Eugenijus Gaubas
Формат:	Artigo
Язык:	Inglês
Опубликовано:	MDPI AG 2020-12-01
Серии:	Sensors
Предметы:	SiGe radiation detectors electron and proton irradiations microwave probed photoconductivity pulsed barrier capacitance transients steady-state photo-ionization spectroscopy
Online-ссылка:	https://www.mdpi.com/1424-8220/20/23/6884
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