Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon

The optical, structural, morphological and chemical properties of Gallium nitride (GaN) and Indium Gallium nitride (InxGa1-xN) thin films grown on Si (100) by plasma-assisted atomic layer deposition (PEALD) technique at a temperature of 300°C. X-ray diffraction (XRD) was performed, obtaining polycry...

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Egile Nagusiak:	D. Tepatzi-Xahuentitla, D. Cortes-Salinas, D.A. Granada-Ramírez, Y. Panecatl Bernal, M. Pérez-González, S.A. Tomás, A.A. Durán-Ledezma, Salvador Alcantara-Iniesta, M.L. Gómez-Herrera, J.G. Mendoza-Alvarez, J. Alvarado
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	Elsevier 2025-09-01
Saila:	Results in Engineering
Gaiak:	GaN thin films InGaN thin films Heterostructures Plasma-enhanced atomic layer deposition (PEALD) Photodetector
Sarrera elektronikoa:	http://www.sciencedirect.com/science/article/pii/S2590123025025551
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