Structural and optical analysis of GaN and InxGa1-xN photodetectors fabricated by PEALD on silicon

The optical, structural, morphological and chemical properties of Gallium nitride (GaN) and Indium Gallium nitride (InxGa1-xN) thin films grown on Si (100) by plasma-assisted atomic layer deposition (PEALD) technique at a temperature of 300°C. X-ray diffraction (XRD) was performed, obtaining polycry...

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Үндсэн зохиолчид:	D. Tepatzi-Xahuentitla, D. Cortes-Salinas, D.A. Granada-Ramírez, Y. Panecatl Bernal, M. Pérez-González, S.A. Tomás, A.A. Durán-Ledezma, Salvador Alcantara-Iniesta, M.L. Gómez-Herrera, J.G. Mendoza-Alvarez, J. Alvarado
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Elsevier 2025-09-01
Цуврал:	Results in Engineering
Нөхцлүүд:	GaN thin films InGaN thin films Heterostructures Plasma-enhanced atomic layer deposition (PEALD) Photodetector
Онлайн хандалт:	http://www.sciencedirect.com/science/article/pii/S2590123025025551
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!