Halogen‐Free Anisotropic Atomic‐Layer Etching of HfO2 at Room Temperature
Hafnium(IV) oxide (HfO2)‐based materials have attracted substantial interest owing to their outstanding performance in advanced ultrathin semiconductor devices. However, achieving atomic‐level precision and smoothness in HfO2 etching remains a major challenge, primarily due to the nonvolatility of r...
Gorde:
| Egile Nagusiak: | , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Wiley-VCH
2025-10-01
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| Saila: | Small Science |
| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1002/smsc.202500251 |
| Etiketak: |
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