AlGaN back-barrier integration for trap reduction in buffer-free GaN HEMTs on SiC

This work investigates the impact of incorporating an AlGaN back barrier (BB) in buffer-free AlGaN/GaN high electron mobility transistors (HEMTs) on SiC. Both devices use an AlN nucleation layer (NL) for vertical isolation, while the modified structure introduces an Al0.2Ga0.8N BB beneath the GaN ch...

Descrición completa

Detalles Bibliográficos

Principais autores:	François Grandpierron, Elodie Carneiro, Lyes Ben Hammou, Anders Lundskog, Jui-Che Chang, Jr-Tai Chen, Farid Medjdoub
Formato:	Artigo
Idioma:	Inglês
Publicado:	AIP Publishing LLC 2026-03-01
Series:	APL Electronic Devices
Acceso en liña:	https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0323419/20936054/016129_1_5.0323419.pdf
Tags:	Engadir etiqueta Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!