AlGaN back-barrier integration for trap reduction in buffer-free GaN HEMTs on SiC
This work investigates the impact of incorporating an AlGaN back barrier (BB) in buffer-free AlGaN/GaN high electron mobility transistors (HEMTs) on SiC. Both devices use an AlN nucleation layer (NL) for vertical isolation, while the modified structure introduces an Al0.2Ga0.8N BB beneath the GaN ch...
Gorde:
| Egile Nagusiak: | , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
AIP Publishing LLC
2026-03-01
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| Saila: | APL Electronic Devices |
| Sarrera elektronikoa: | https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0323419/20936054/016129_1_5.0323419.pdf |
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