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SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter

In this paper, a design driven comparison between two 190 kVA industrial three-phase two-level voltage source converter (2L-VSC) designs based in silicon carbide (SiC) and silicon (Si) for 690 V grids is presented. These two designs were conceived to have the same nominal power, while switching at r...

Täydet tiedot

Tallennettuna:
Päätekijät: Carlos D. Fuentes, Marcus Müller, Steffen Bernet, Samir Kouro
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI AG 2021-05-01
Sarja:Energies
Aiheet:
2L-VSC
AFE
SiC-MOSFET
Si-IGBT
converter design
converter assessment
Linkit:https://www.mdpi.com/1996-1073/14/11/3054
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