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Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc–tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with...

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Principais autores: Yu-Jin Hwang, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Jin-Hyuk Bae
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2022-09-01
Serier:Nanomaterials
Fag:
structural relaxation
electrical characteristics
bias stability
zinc–tin oxide
thin-film transistor
solution process
Online adgang:https://www.mdpi.com/2079-4991/12/18/3097
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