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Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (V<sub>TH</sub>) and its origin wer...

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Главные авторы: Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Формат: Artigo
Язык:Inglês
Опубликовано: MDPI AG 2024-03-01
Серии:Nanomaterials
Предметы:
oxide semiconductor
thin-film transistors (TFTs)
bias instability
threshold voltage dependency
degradation mechanism
Online-ссылка:https://www.mdpi.com/2079-4991/14/5/466
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