Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (V_TH) and its origin wer...

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Principais autores:	Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
格式:	Artigo
語言:	Inglês
出版:	MDPI AG 2024-03-01
叢編:	Nanomaterials
主題:	oxide semiconductor thin-film transistors (TFTs) bias instability threshold voltage dependency degradation mechanism
在線閱讀:	https://www.mdpi.com/2079-4991/14/5/466
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