Modeling and Epitaxial Growth of Homogeneous <em>Long</em>-InGaN Nanowire Structures
One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of hi...
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| Glavni autori: | , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2020-12-01
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| Serija: | Nanomaterials |
| Teme: | |
| Online pristup: | https://www.mdpi.com/2079-4991/11/1/9 |
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