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Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without the need for substrate implantation. The fab...

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Principais autores: Fabio Bersano, Niccolo Martinolli, Ilan Bouquet, Michele Ghini, Eloi Collette, Liza Zaper, Floris Braakman, Martino Poggio, Mathieu Luisier, Adrian Mihai Ionescu
Format: Artigo
Sprog:Inglês
Udgivet: IEEE 2025-01-01
Serier:IEEE Journal of the Electron Devices Society
Fag:
Cryo-CMOS
FDSOI
quantum dots
vapor phase etching
back-gate
dual-gate control
Online adgang:https://ieeexplore.ieee.org/document/10902357/
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