Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures
Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3 K for the first...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
IEEE
2025-01-01
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| Edice: | IEEE Journal of the Electron Devices Society |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/10970722/ |
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