Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without the need for substrate implantation. The fab...

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Detalles Bibliográficos

Autores principales:	Fabio Bersano, Niccolo Martinolli, Ilan Bouquet, Michele Ghini, Eloi Collette, Liza Zaper, Floris Braakman, Martino Poggio, Mathieu Luisier, Adrian Mihai Ionescu
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	IEEE 2025-01-01
Colección:	IEEE Journal of the Electron Devices Society
Materias:	Cryo-CMOS FDSOI quantum dots vapor phase etching back-gate dual-gate control
Acceso en línea:	https://ieeexplore.ieee.org/document/10902357/
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