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Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures

Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3 K for the first...

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Principais autores: Hung-Chi Han, Edoardo Charbon, Christian Enz
Format: Artigo
Sprog:Inglês
Udgivet: IEEE 2025-01-01
Serier:IEEE Journal of the Electron Devices Society
Fag:
Automated extraction
double-gate
FDSOI
MOSFET
modeling
radio frequency
Online adgang:https://ieeexplore.ieee.org/document/10970722/
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