Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory

Abstract The charge-trapping memory devices with a structure Pt/Al2O3/(Ta2O5) x (TiO2) 1−x /Al2O3/p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta2O5) x (TiO2) 1−x and Si substrate was designed to enha...

Descripción completa

Detalles Bibliográficos

Autores principales:	C. Y. Wei, B. Shen, P. Ding, P. Han, A. D. Li, Y. D. Xia, B. Xu, J. Yin, Z. G. Liu
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Nature Portfolio 2017-07-01
Colección:	Scientific Reports
Acceso en línea:	https://doi.org/10.1038/s41598-017-05248-6
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!