Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices
Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filament...
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| Glavni autor: | |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Wiley
2013-01-01
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| Serija: | Advances in Materials Science and Engineering |
| Online pristup: | http://dx.doi.org/10.1155/2013/362053 |
| Oznake: |
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