Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System
We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a Ta...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2022-06-01
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| Serie: | Nanomaterials |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2079-4991/12/13/2185 |
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