An Investigation of Gate Voltage Oscillation and its Suppression for SiC MOSFET
Silicon Carbide (SiC) MOSFET has undergone a rapid development and commercialization in recent years due to its superior features. However, the mainstream commercial SiC MOFESTs are often fitted to packages that are previously designed for silicon-based devices, which brings oscillation issues at fa...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2020-01-01
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| coleção: | IEEE Access |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9139498/ |
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