An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules
This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET gate driver with variable voltage, which allows simultaneous variations in several different parameters to optimize the switching performance of semiconductor devices. As a relatively new device, the Si...
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| Asıl Yazarlar: | , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2023-08-01
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| Seri Bilgileri: | Energies |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/1996-1073/16/16/5984 |
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