A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity. These advantages enable the SiC MOSFET to operate at higher switching frequencies, while, as the switching frequency increases, the turn-on...

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Главные авторы:	Hongyan Zhao, Jiangui Chen, Yan Li, Fei Lin
Формат:	Artigo
Язык:	Inglês
Опубликовано:	MDPI AG 2021-04-01
Серии:	Energies
Предметы:	SiC MOSFET switching speed turn-on loss SRD-type drive circuit turn-on oscillation
Online-ссылка:	https://www.mdpi.com/1996-1073/14/9/2449
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