Promise and Challenges of High-Voltage SiC Bipolar Power Devices
Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taki...
में बचाया:
| मुख्य लेखकों: | , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
MDPI AG
2016-11-01
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| श्रृंखला: | Energies |
| विषय: | |
| ऑनलाइन पहुंच: | http://www.mdpi.com/1996-1073/9/11/908 |
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