Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
Abstract In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is fo...
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| Main Authors: | , , , , , , |
|---|---|
| Format: | Artigo |
| Language: | Inglês |
| Published: |
SpringerOpen
2021-09-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-021-03601-3 |
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