Strain Engineering of Ge Quantum Wells in Planar Ge/Si1 − xGex Heterostructures
Abstract Germanium (Ge) has been identified as a good candidate among semiconductor‐based materials for quantum applications. One of the main reasons lies in the long coherence time of spins of localized holes, its ability to host superconducting pairing correlations, and compatibility with compleme...
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| Asıl Yazarlar: | , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley-VCH
2025-12-01
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| Seri Bilgileri: | Advanced Materials Interfaces |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/admi.202500620 |
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