Electrical Tunability in 3-Gated Reconfigurable Transistor for Analog/RF Applications
The potential of electrical tunability in a 3-gated (3G) Reconfigurable Field Effect Transistor (RFET) for analog/RF applications is investigated through four distinct configurations (R<inline-formula> <tex-math notation="LaTeX">${}_{\text {2-IG-LVT}}$ </tex-math></inline-formula>, R<inline-formula>...
Gorde:
| Egile Nagusiak: | , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
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IEEE
2025-01-01
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| Saila: | IEEE Journal of the Electron Devices Society |
| Gaiak: | |
| Sarrera elektronikoa: | https://ieeexplore.ieee.org/document/11045726/ |
| Etiketak: |
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